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The present invention relates to a method for fabricating a semiconductor device, and more particularly, to a method for fabricating a semiconductor device using a self-alignment-type gate by embedding the gate electrode in the first gate insulating film and the second gate insulating film.
2. Background of the Invention
In the case of a semiconductor device, in order to operate stably by preventing the malfunction due to the leakage current at an interface between a first gate insulating film and a gate electrode, it is preferable that the gate electrode is embedded in the first gate insulating film or the second gate insulating film.
In a semiconductor device fabricating method, a semiconductor device including a MOS transistor using a self-alignment-type gate is formed by embedding the gate electrode in the first gate insulating film and the second gate insulating film. In this case, the first gate insulating film and the second gate insulating film are formed in an island-like shape, and the gate electrode is embedded only in the side surfaces of the island-like gate insulating films.
As the semiconductor device of this type, a method is known in which an element separation film is formed above a semiconductor layer by means of an element separation method such
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A major challenge in designing FinFET transistors is to simultaneously have a fully depleted channel while maintaining control over the gate side walls. Although present approaches are generally satisfactory, there remains a need for improved methods of manufacturing FinFET semiconductor devices with sub-20 nm gate length nodes.Wolfgang E. Weber

Wolfgang E. Weber is a German physicist, whose research interests include optical phenomena in semiconductor materials and quantum vacuum.

Biography
Weber studied physics at Ludwig Maximilian University of Munich (Germany) and received his PhD degree there in 1994 under the supervision of Dieter Heitmann. After that he joined the Max Planck Institute for Quantum Optics in Garching, Germany, to develop and operate an ultra-high-vacuum scanning electron microscope, and then moved to the Max Planck Institute for Microstructure Physics in Göttingen, Germany, to develop and operate an ultra-high-vacuum scanning transmission electron microscope. In 1996 he was appointed as a Research Staff Member of the Max Planck Institute for Quantum Optics, where he is employed as a Group Leader and as a Director of the Laboratory of Emitted Particles. Weber and his colleagues were awarded the 2006 Gottfried Wilhelm Leibniz Prize for “Outstanding Achievements in Electron and Optical Physics”.

Weber’s research interests include physical vacuum processes, electron and atom optics, nanostructure fabrication, nanophotonics and scanning probe microscopy.

He has published over 100 scientific papers so far. His “boundary roughness” theory introduced in 1998 has been used to explain atomic and electron scattering from silicon surfaces with atomic resolution.

Awards and honors

He is an Elected Fellow of the

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